* rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 8.9A
* Qg(tot) = 31nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR Body Diode
* Optimized efficiency at hi.

* Primary switch for Isolated DC/DC converters
* Distributed Power and Intermediate Bus Architectures
* High.

N-Channel MOSFET

FDS3570

FDS3512

FDS3580

FDS3590

FDS3601

FDS3612

FDS3670

FDS3672

FDS3680

FDS3682

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